By Lucas Mearian
Samsung announced a new 8GB dual inline memory module (DIMM) that stacks memory chips on top of each other, which increases the density of the memory by 50% compared to conventional DIMM technology.

Samsung’s new registered or buffered (RDIMM) product is based on its current Green DDR3 DRAM and 40 nanometer (nm)-sized circuitry. The new memory module is aimed at the server and enterprise storage markets.

The three-dimensional (3D) chip stacking process is referred to in the memory industry as through silicon via (TSV). Samsung said the TSV process saves up to 40% of the power consumed by a conventional RDIMM. Using the TSV technology will greatly improve chip density in next-generation server systems, Samsung said, making it attractive for high-density, high-performance systems.

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