Micron Technologies Inc. has introduced a multi-chip package (MCP) memory for smart phones, personal media players, and mobile Internet devices (MIDs) that includes a 4-Gbit NAND flash memory die and a 2-Gbit low-power DDR die.
The 4-Gbit NAND flash memory is implemented in 34-nm process technology while the DRAM is implemented in a 50-nm process. The memory is being sampled to early customers and will go into mass production early in 2010, Micron said. Micron said it can support up to 8-Gbits of NAND and 8-Gbits of LPDDR with the inclusion of additional die but without increasing the package size.
