The EDN.com’s IC Insider reveals the densely packed real estate and impressive clock-synchronization circuitry that allow Samsung’s 1-Gbit K4B1G0846D-HCF8 to achieve its 1066-Mbps data-transfer rate. Here is an article (published on EDN.com) that takes an inside look at an advanced 68-nm, 1-Gbit memory device, and talk a little about how it achieves the blazing speeds required in today’s applications.
For at least two years now, DRAM manufacturers have been touting the advantages of DDR3 SDRAMs over the previous generation of DDR2 memories. These benefits include a lower operating voltage of 1.5V versus 1.8V, a power-consumption reduction of up to 30%, and the cost advantages inherent in using more advanced technologies. The primary benefit mentioned, of course, is the higher data-transfer rates. While DDR2’s maximum transfer rate is just 800 Mbps, DDR3 is specified up to 1600 Mbps.
