Current high speed memories, such as Dynamic Static Random Access Memory (DRAM) and Static Random Access Memory (SRAM), have one critical drawback- they require constant power in order to retain memories. Using a magnetic memory chip known as Magnetic Random Access Memory (MRAM), information can be stored in the form of magnetization of a magnetic cell even when no power is maintained.
Experiments carried out at PTB Braunschweig, led scientists to the discovery that a single precessional turn is sufficient for spin torque magnetization reversal. This type of ‘ballistic’ spin torque reversal relates to the particularly quick physical time limit of spin torque magnetization reversal. The achievement was made using specifically tailored current pulse parameters in combination with a small magnetic bias field.
